Semiconductor device manufacturing method and semiconductor device

ABSTRACT

A semiconductor device manufacturing method of an embodiment includes forming a first layer in a region of a first substrate excluding an outer peripheral portion thereof; forming a first semiconductor circuit above the first layer; forming a second semiconductor circuit on a second substrate; forming a second layer with a predetermined width at an outer peripheral portion of the second substrate; bonding a surface of the first substrate on a side provided with the first semiconductor circuit and a surface of the second substrate on a side provided with the second semiconductor circuit; and applying tensile stress to the first layer and the second layer to debond the first layer and the second layer, thereby forming the second substrate including the first semiconductor circuit and the second semiconductor circuit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-050387, filed on Mar. 18, 2019; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor devicemanufacturing method and a semiconductor device.

BACKGROUND

The technique of manufacturing a semiconductor device including twosemiconductor circuits in such a manner that the semiconductor circuitsare each formed on two substrates and these two substrates are bonded toeach other has been known. In this case, a de-bondable layer is, forexample, provided across an entire surface of a lower layer of thesemiconductor circuit of one substrate, and after bonding of thesubstrates, the processing of removing one substrate at the de-bondablelayer is performed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view illustrating a configuration example of a semiconductordevice according to an embodiment;

FIGS. 2A and 2B are views illustrating the configuration example of asemiconductor device according to the embodiment;

FIGS. 3A and 3B are views illustrating the configuration example of asemiconductor device according to the embodiment;

FIGS. 4A to 4C are flow diagrams illustrating one example of the stepsof the processing of manufacturing the semiconductor device of theembodiment;

FIGS. 5A to 5C are flow diagrams illustrating one example of the stepsof the processing of manufacturing the semiconductor device of theembodiment;

FIGS. 6A to 6D are flow diagrams illustrating one example of the stepsof the processing of manufacturing the semiconductor device of theembodiment;

FIGS. 7A to 7D are flow diagrams illustrating one example of the stepsof the processing of forming a de-bondable layer according to a firstvariation of the embodiment;

FIG. 8 is a view illustrating a de-bondable layer arranged on asubstrate according to a second variation of the embodiment;

FIGS. 9A to 9C are flow diagrams illustrating one example of the stepsof the processing of forming a de-bondable layer according to a thirdvariation of the embodiment; and

FIGS. 10A to 10C are views illustrating variations of a de-bondablelayer according to a fourth variation of the embodiment.

DETAILED DESCRIPTION

A semiconductor device manufacturing method of an embodiment includesforming a first layer in a region of a first substrate excluding anouter peripheral portion thereof; forming a first semiconductor circuitabove the first layer; forming a second semiconductor circuit on asecond substrate different from the first substrate; forming a secondlayer with a predetermined width at an outer peripheral portion of thesecond substrate; bonding a surface of the first substrate on a sideprovided with the first semiconductor circuit and a surface of thesecond substrate on a side provided with the second semiconductorcircuit; and debonding the first layer and the second layer, therebyforming the second substrate including the first semiconductor circuitand the second semiconductor circuit.

Hereinafter, the present invention will be described in detail withreference to the drawings. Note that the present invention is notlimited to the following embodiment. Moreover, components in thefollowing embodiment include components easily arrived by those skilledin the art and substantially identical components.

Configuration Example of Semiconductor Device

FIG. 1 is a view illustrating a configuration example of a semiconductordevice 300 according to the embodiment. As illustrated in FIG. 1, thesemiconductor device 300 includes a substrate 110, semiconductorcircuits 131 and 231, and external terminals 350.

The substrate 110 may be, for example, a semiconductor substrate such asa silicon substrate, a ceramic substrate, or a glass substrate. Thesubstrate 110 is thinned by grinding, and is diced into a chip shape.

A multilayer film 130 including the semiconductor circuit 131 isarranged on one surface of the substrate 110. A multilayer film 230including the semiconductor circuit 231 is arranged on the multilayerfilm 130. For example, a thin film of silicon may be arranged on themultilayer film 230.

As described later, an interface between the multilayer films 130 and230 is a bonded surface at which the multilayer films 130 and 230 arebonded to each other. At least the outermost surfaces of the multilayerfilms 130 and 230 include insulating layers of SiO₂, SiON, SiCN, etc.

The semiconductor circuits 131 and 231 are, for example, flash memoriessuch as three-dimensional NAND flash memories, capacitors of dynamicrandom access memories (DRAMs), and other memories. For example, thesemiconductor circuits 131 and 231 may be photodiodes of image sensors,or may be logic circuits including complementary metal oxidesemiconductor (CMOS) transistors. Moreover, the semiconductor circuits131 and 231 may be the same type of circuit, or may be differentcircuits.

The multiple external terminals 350 are arranged at a surface layer ofthe semiconductor circuit 231. Some of the multiple external terminals350 are connected to wiring of the semiconductor circuit 131 in themultilayer film 130. Some other external terminals 350 are connected towiring of the semiconductor circuit 231 in the multilayer film 230.

The semiconductor device 300 is, for example, mounted on anothersubstrate such as a printed-circuit board. Thus, the semiconductorcircuits 131 and 231 can be electrically connected to each other atleast through the external terminals 350. The semiconductor circuits 131and 231 may have terminals (not illustrated) exposed at a bonded surfacetherebetween, and these terminals may be bonded to each other toelectrically connect the semiconductor circuits 131 and 231. Theterminals directly connecting the semiconductor circuits 131 and 231 toeach other are, for example, made of copper (Cu), gold (Au), or platinum(Pt).

The semiconductor device 300 described above is manufactured in such amanner that two substrates 110 and 210 illustrated in FIGS. 2A, 2B, 3A,and 3B are bonded to each other, for example.

FIGS. 2A and 2B are views illustrating a configuration example of asemiconductor device 100 according to the embodiment. FIG. 2A is asectional view of the semiconductor device 100, and FIG. 2B is a planview of the semiconductor device 100. Note that the multilayer film 130is not illustrated in FIG. 2B.

As illustrated in FIGS. 2A and 2B, the semiconductor device 100 includesthe substrate 110, a de-bondable layer 120, and the multilayer film 130.

The de-bondable layer 120 with a predetermined width is arranged at anouter peripheral portion 110 c of the substrate 110. The de-bondablelayer 120 is a weak layer relatively-easily cleavable by tensile stress.One end of the de-bondable layer 120 on an end portion (edge) 110 e sideof the substrate 110 is arranged inward of the substrate 110 by adistance d of equal to or longer than 2.0 mm from an end portion 110 eof the substrate 110, for example. The other end of the de-bondablelayer 120 on a central (center) side of the substrate 110, i.e., theinner peripheral diameter of the de-bondable layer 120, is a distanceW1.

The multilayer film 130 has the semiconductor circuit 131 arranged in adevice region 130 d within the distance W1 of the substrate 110. Themultilayer film 130 has multiple stacked structures including thesemiconductor circuit 131, and as described above, at least theuppermost layer is the insulating layer. A terminal made of metal may beprovided at a surface of the insulating layer in some cases.

FIGS. 3A and 3B are views illustrating a configuration example of asemiconductor device 200 according to the embodiment. FIG. 3A is asectional view of the semiconductor device 200, and FIG. 3B is a planview of the semiconductor device 200. Note that the multilayer film 230is not illustrated in FIG. 3B.

As illustrated in FIGS. 3A and 3B, the semiconductor device 200 includesthe substrate 210, a de-bondable layer 220, and the multilayer film 230.

The substrate 210 may be, for example, a semiconductor substrate such asa silicon substrate, a ceramic substrate, or a glass substrate. Thediameter of the substrate 210 is, for example, substantially equal tothe diameter of the substrate 110.

The de-bondable layer 220 is arranged at a predetermined depth from asurface of the substrate 210 in a region excluding an outer peripheralportion 210 c. The de-bondable layer 220 is, for example, a weak layerrelatively-easily cleavable by tensile stress. The outermost peripheraldiameter of the de-bondable layer 220 is a distance W2. The width of theouter peripheral portion 210 c of the substrate 210 is narrower than thewidth of the outer peripheral portion 110 c of the substrate 110described above. The distance W2 as the diameter of the de-bondablelayer 220 is longer than the distance W1 as the inner peripheraldiameter of the de-bondable layer 120 described above.

As described above, the de-bondable layer 220 is at the predetermineddepth from the surface of the substrate 210. For example, a silicon thinlayer 210 t as part of the substrate 210 is arranged at an upper layerof the de-bondable layer 220.

The multilayer film 230 has the semiconductor circuit 231 arranged in adevice region 230 d within the distance W2 of the substrate 210. Themultilayer film 230 has multiple stacked structures including thesemiconductor circuit 231, and as described above, at least theuppermost layer is the insulating layer. A terminal made of metal may beprovided at a surface of the insulating layer in some cases. The deviceregion 230 d of the semiconductor device 200 has a size substantiallyequal to that of the device region 130 d of the semiconductor device 100described above.

Example of Processing of Manufacturing Semiconductor Device

Next, examples of the processing of manufacturing the semiconductordevices 100, 200, and 300 of the embodiment will be described withreference to FIGS. 4A to 6D.

FIGS. 4A to 4C are flow diagrams illustrating one example of the stepsof the processing of manufacturing the semiconductor device 100 of theembodiment.

As illustrated in FIG. 4A, the substrate 110 is prepared.

As illustrated in FIG. 4B, the multilayer film 130 is formed on thesubstrate 110. The semiconductor circuit 131 in the multilayer film 130can be formed using a normal semiconductor circuit manufacturingtechnique.

As illustrated in FIG. 4C, the de-bondable layer 120 is formed at theouter peripheral portion 110 c of the substrate 110. The de-bondablelayer 120 is formed in such a manner that a surface of the multilayerfilm 130 is roughened by polishing with a buff or corrosion with afluorine-based etching solution, for example. At this point, a surfaceroughness is preferably equal to or greater than 50 nm.

As described above, the processing of manufacturing the semiconductordevice 100 of the embodiment ends.

FIGS. 5A to 5C are flow diagrams illustrating one example of the stepsof the processing of manufacturing the semiconductor device 200 of theembodiment.

As illustrated in FIG. 5A, the substrate 210 is prepared.

As illustrated in FIG. 5B, the outer peripheral portion 210 c of thesubstrate 210 is covered with, e.g., a resist film 210 p, and ions suchas hydrogen ions, oxygen ions, argon ions, or helium ions are implanted(injected) to a predetermined depth of the substrate 210 inside theouter peripheral portion 210 c.

Alternatively, the substrate 210 inside the outer peripheral portion 210c is irradiated with a laser whose focal point is adjusted to thepredetermined depth of the substrate 210. In the case of laserirradiation, the resist film 210 p is not necessarily provided. Theouter peripheral portion 210 c may be covered with, e.g., a metal layerwith high reflectance such that laser transmission is prevented. Laserlight may be, for example, ultraviolet light. Pulsed laser may beirradiated. In this case, a pulse width may be, for example, apicosecond, a nanosecond, or a femtosecond.

The substrate 210 at the predetermined depth is modified by ionimplantation or laser irradiation, and turns into a weak modified layer220 r. Thereafter, the substrate 210 is annealed to stabilize themodified layer 220 r, and in this manner, the de-bondable layer 220 isformed. By stabilization by annealing processing, cleavage of thede-bondable layer 220 in the middle of formation of the semiconductorcircuit 231 can be reduced, for example.

As illustrated in FIG. 5C, the multilayer film 230 is formed on the thinlayer 210 t of the substrate 210 in which the de-bondable layer 220 isformed. The semiconductor circuit 231 in the multilayer film 230 can beformed using a normal semiconductor circuit manufacturing technique.

As described above, the processing of manufacturing the semiconductordevice 200 of the embodiment ends.

FIGS. 6A to 6D are flow diagrams illustrating one example of the stepsof the processing of manufacturing the semiconductor device 300 of theembodiment.

As illustrated in FIG. 6A, the substrates 110 and 210 are arranged in astate in which the multilayer films 130 and 230 formed as describedabove face each other. The outermost insulating layers of the multilayerfilms 130 and 230 are, for example, activated by plasma processing.

As illustrated in FIG. 6B, the activated insulating layers contact eachother, and the substrates 110 and 210 are bonded to each other by theinsulating layers. When the insulating layers have, e.g., metalterminals, the terminals are also bonded to each other. A bondingtechnique at this point is metal bonding such as Cu—Cu bonding, Au—Aubonding, or Pt—Pt bonding. That is, in a case where the insulatinglayers have, e.g., the metal terminals, hybrid bonding of bondingbetween the insulating layers and bonding between the terminals isemployed.

At the substrates 110 and 210 bonded to each other, the device regions130 d and 230 d of the multilayer films 130 and 230 are arranged atpositions facing each other. That is, the semiconductor circuits 131 and231 face each other.

At the substrates 110 and 210 bonded to each other, the de-bondablelayer 120 is bonded to a surface of the multilayer film 230 of thesubstrate 210. The de-bondable layer 120 has surface roughness asdescribed above, and a bonded area between the de-bondable layer 120 andthe multilayer film 230 is smaller than that of a flat surface. Thus, abonding strength between the de-bondable layer 120 and the multilayerfilm 230 is weaker than those in other regions. Moreover, at least partof the de-bondable layers 120 and 220 has a portion OL overlapping witheach other as viewed from above.

As illustrated in FIG. 6C, tensile stress is applied to the de-bondablelayers 120 and 220. The tensile stress can be applied in such a mannerthat at least one of the substrates 110 and 210 is separated from theother one of the substrates 110 and 210, for example. At this point, ablade may be inserted to between the substrates 110 and 210.Alternatively, fluid spraying with a water jet or gas spraying with anair blade may be performed for a portion between the substrates 110 and210, for example.

In this manner, the de-bondable layer 120 with a weak bonding strengthis, for example, debonded from an end portion 110 e side of thesubstrate 110, and therefore, a cleavage groove CLV is caused. Thecleavage groove CLV extends inward of the substrate 110 along thede-bondable layer 120. When reaching the portion OL at which thede-bondable layers 120 and 220 overlap with each other, the cleavagegroove CLV extends toward a substrate 210 side, and reaches thede-bondable layer 220. The cleavage groove CLV having reached thede-bondable layer 220 extends inward of the substrate 210 along thede-bondable layer 220. Eventually, the de-bondable layers 120 and 220across the entire surfaces of the substrates 110 and 210 are debonded,and the substrates 110 and 210 are separated from each other.

Note that when the de-bondable layer 120 is debonded, the de-bondablelayer 120 may be debonded at any of a portion inside the de-bondablelayer 120, a portion at an interface between the de-bondable layer 120and the multilayer film 130, and a portion at an interface between thede-bondable layer 120 and the multilayer film 230. When the de-bondablelayer 220 is debonded, the de-bondable layer 220 may be debonded at anyof a portion inside the de-bondable layer 220, a portion at an interfacebetween the de-bondable layer 220 and the substrate 210, and a portionat an interface between the de-bondable layer 220 and the thin layer 210t.

As illustrated in FIG. 6D, the substrate 110 separated as describedabove is arranged such that the multilayer film 230 separated from thesubstrate 210 and including the semiconductor circuit 231 is on themultilayer film 130 including the semiconductor circuit 131 and the thinlayer 210 t is on the multilayer film 230. That is, the substrate 110has both of the semiconductor circuits 131 and 231. Note that part orthe entirety of the debonded de-bondable layer 120 may be present on themultilayer film 130 at the outer peripheral portion 110 c. Moreover,part or the entirety of the debonded de-bondable layer 220 may bepresent on the thin layer 210 t.

Thereafter, the substrate 110 is surface-cleaned and flattened.Thereafter, a via 340 and the external terminals 350 are formed, andtherefore, the semiconductor device 300 is manufactured. Note that bycleaning processing and flattening processing, at least the de-bondablelayers 120 and 220 are eliminated from the substrate 110.

Moreover, the thin layer 210 t and the multilayer film 230 are absent ina region of the substrate 210 separated as described above inside theouter peripheral portion 210 c. That is, the semiconductor circuit 231is eliminated from the substrate 210. Note that part or the entirety ofthe debonded de-bondable layer 220 may be present on the substrate 210in the region inside the outer peripheral portion 210 c. Moreover, partor the entirety of the debonded de-bondable layer 120 may be present onthe multilayer film 230 at the outer peripheral portion 210 c.

Thereafter, the substrate 210 is re-utilized as a recycled substrateafter, e.g., the cleaning processing and the flattening processing.

As described above, the processing of manufacturing the semiconductordevice 300 of the embodiment ends.

Comparative Example

In the processing of manufacturing a semiconductor device of acomparative example, a substrate configured such that a multilayer filmis formed on a de-bondable layer formed across an entire surface of thesubstrate and a substrate configured such that a multilayer film isformed without a de-bondable layer are used. However, when thede-bondable layer is formed across the entire surface of the substrate,the de-bondable layer might be, in some cases, debonded in the middle offormation of a semiconductor circuit even before bonding of thesubstrates, and the multilayer film and the substrate might be separatedfrom each other, for example.

The semiconductor device 200 of the embodiment includes the de-bondablelayer 220 arranged in the region excluding the outer peripheral portion210 c. Thus, separation of the multilayer film 230 and the substrate 210in the middle of formation of the semiconductor circuit 231 is reduced,for example. Thus, a yield ratio in the processing of manufacturing thesemiconductor device 200 is improved.

The semiconductor device 100 of the embodiment includes the de-bondablelayer 120 having the predetermined width and arranged at the outerperipheral portion 110 c. Thus, after the multilayer films 130 and 230have been bonded to each other, the substrate 210 can be more reliablyseparated. Thus, a yield ratio in the processing of manufacturing thesemiconductor device 300 is improved.

The semiconductor device 300 of the embodiment is manufactured byseparation of the substrates 110 and 210. Thus, separation is allowedwithout grinding and removing the substrate 210, for example.Consequently, re-utilization of the substrate 210 is allowed. As aresult, a cost for the processing of manufacturing the semiconductordevice 300 can be reduced.

(First Variation)

Next, the processing of forming a de-bondable layer 121 on the substrate110 in a first variation of the embodiment will be described withreference to FIGS. 7A to 7D. The first variation is an example in a casewhere a terminal 140 is provided at the surface of the multilayer film130.

FIGS. 7A to 7D are flow diagrams illustrating one example of the stepsof the processing of forming the de-bondable layer 121 according to thefirst variation of the embodiment.

As illustrated in FIG. 7A, multiple grooves 130 tr are formed at asurface layer portion of the multilayer film 130 of the substrate 110.

As illustrated in FIG. 7B, a metal layer 140 m of, e.g., copper, gold,or platinum is formed on the multilayer film 130 interposingnot-illustrated barrier metal, and the grooves 130 tr are filled withthe metal layer 140 m. The metal layer 140 m can be formed by platingprocessing, for example.

As illustrated in FIG. 7C, a resist pattern 110 p is formed on the metallayer 140 m excluding the outer peripheral portion 110 c of thesubstrate 110, and the metal layer 140 m at the outer peripheral portion110 c is removed by wet etching.

As illustrated in FIG. 7D, the metal layer 140 m remaining inside theouter peripheral portion 110 c is removed by, e.g., chemical mechanicalpolishing (CMP), and a terminal 140 is formed only in the filled grooves130 tr. The de-bondable layer 121 having the multiple grooves 130 tr isformed at the outer peripheral portion 110 c.

A bonded area between the de-bondable layer 121 and the multilayer film230 of the substrate 210 can be decreased by the multiple grooves 130tr, and a bonding strength can be weakened.

(Second Variation)

Next, the de-bondable layer 220 arranged on the substrate 210 in asecond variation of the embodiment will be described with reference toFIG. 8. The de-bondable layer 220 of the second variation is differentfrom that of the above-described embodiment in that the de-bondablelayer 220 is arranged in a predetermined layer on the substrate 210.

FIG. 8 is a view illustrating the de-bondable layer 220 arranged on thesubstrate 210 according to the second variation of the embodiment. Asillustrated in FIG. 8, an insulating layer 250 is arranged on thesubstrate 210 of the second variation. A semiconductor layer 260 isarranged on the insulating layer 250. The multilayer film 230 isarranged on the semiconductor layer 260.

The insulating layer 250 is, for example, a SiC₂ layer, and as describedlater, functions as a protection layer upon formation of the de-bondablelayer 220 in the semiconductor layer 260.

The semiconductor layer 260 is, for example, a polysilicon layer or anamorphous silicon layer. The de-bondable layer 220 is arranged in thesemiconductor layer 260.

In the above-described embodiment, the ions are implanted to thepredetermined depth of the substrate 210, or the predetermined depth ofthe substrate 210 is irradiated with the laser whose focal point isadjusted to the predetermined depth. In this manner, the de-bondablelayer 220 is formed in the substrate 210.

However, as in the configuration of the second variation, thesemiconductor layer 260 for injecting the de-bondable layer 220 to abovethe substrate 210 protected by the insulating layer 250 may be provided,and the de-bondable layer 220 may be formed in the semiconductor layer260. Thus, the substrate 210 can be protected while the de-bondablelayer 220 can be more reliably formed in an intended layer.

(Third Variation)

Next, the processing of forming a de-bondable layer 221 on the substrate210 in a third variation of the embodiment will be described withreference to FIGS. 9A to 9C. FIGS. 9A to 9C are flow diagramsillustrating one example of the steps of the processing of forming thede-bondable layer 221 according to the third variation of theembodiment.

As illustrated in FIG. 9A, an insulating layer 240 such as a siliconoxidized layer is, for example, formed on front and back surfaces of thesubstrate 210, except for the region of the substrate 210 inside theouter peripheral portion 210 c.

As illustrated in FIG. 9B, the region of the substrate 210 inside theouter peripheral portion 210 c is anodically oxidized. Specifically,current is, for example, applied in a hydrofluoric acid ethanol solutionwith the substrate 210 serving as an anode. Thus, micropores with adiameter of several nm are formed at a surface layer portion of thesubstrate 210, and a porous layer 221 pr as a porous surface layer ofthe substrate 210 is formed.

As illustrated in FIG. 9C, the insulating layer 240 on the back surfaceof the substrate 210 is removed, and a surface of the porous layer 221pr is flattened by annealing to form the de-bondable layer 221. Aninsulating thin layer 240 t such as a silicon oxidized layer may beformed on the de-bondable layer 221.

Note that the substrate 210 of the third variation does not have thethin layer 210 t of, e.g., silicon. Thus, in a case where any of thesemiconductor circuits formed on the substrates 110 and 210 includes aconfiguration in which a diffusion layer is provided at a surface layerof a semiconductor layer, such as a CMOS transistor, such asemiconductor circuit is formed on the substrate 110.

(Fourth Variation)

In a fourth variation, variations of the de-bondable layer provided atthe outer peripheral portion will be described with reference to FIGS.10A to 10C. FIGS. 10A to 10C are views of the variations of thede-bondable layer according to the fourth variation of the embodiment.

As illustrated in FIG. 10A, the de-bondable layer at the outerperipheral portion may be provided on both of the substrates 110 and210. That is, in addition to the de-bondable layer 120 of the substrate110, a de-bondable layer 222 may be arranged on the substrate 210 at aposition corresponding to the de-bondable layer 120 of the substrate110.

As in the above-described embodiment and the first variation, thede-bondable layer 222 can be also formed by, e.g., the processing ofroughening a surface or the processing of forming grooves not filledwith metal.

As illustrated in FIG. 10B, a gap 123 may be provided between thesubstrates 110 and 210 instead of the de-bondable layer at the outerperipheral portion. That is, at least part of the multilayer film 130 atthe outer peripheral portion 110 c of the substrate 110 is removed, andin this manner, the gap 123 is formed. Thus, the substrates 110 and 210are not bonded to each other at the outer peripheral portions 110 c and210 c, and advantageous effects similar to those of the de-bondablelayer 120 of the embodiment are provided.

As illustrated in FIG. 10C, a gap 223 may be also provided at thesubstrate 210. That is, in addition to the gap 123 at the outerperipheral portion 110 c of the substrate 110, the gap 223 is alsoprovided at the outer peripheral portion 210 c of the substrate 210. Inthis case, as in the gap 123 of the substrate 110, at least part of themultilayer film 230 at the outer peripheral portion 210 c is removed,and in this manner, the gap 223 can be also formed at the substrate 210.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor device manufacturing methodcomprising: forming a first layer in a region of a first substrateexcluding an outer peripheral portion thereof; forming a first filmincluding a first semiconductor circuit above the first layer; forming asecond film including a second semiconductor circuit on a secondsubstrate different from the first substrate; forming a second layerwith a predetermined width on the second film at an outer peripheralportion of the second substrate; bonding a surface of the firstsubstrate on a side provided with the first semiconductor circuit and asurface of the second substrate on a side provided with the secondsemiconductor circuit; and debonding the first layer and the secondlayer, thereby forming the second substrate including the firstsemiconductor circuit and the second semiconductor circuit.
 2. Thesemiconductor device manufacturing method according to claim 1, whereinthe first layer of the first substrate is formed at a predetermineddepth of the first substrate.
 3. The semiconductor device manufacturingmethod according to claim 2, wherein forming the first layer on thefirst substrate includes any of: injecting an elemental ion to thepredetermined depth of the first substrate, irradiating thepredetermined depth of the first substrate with a laser, and oxidizing aregion of the first substrate inside the outer peripheral portionthereof.
 4. The semiconductor device manufacturing method according toclaim 3, wherein the elemental ion injected to the first substrate is atleast one of a hydrogen ion, an oxygen ion, an argon ion, or a heliumion, and the laser with which the first substrate is irradiated isultraviolet light.
 5. The semiconductor device manufacturing methodaccording to claim 3, wherein when the first substrate is irradiatedwith the laser, a laser pulsed with any pulse width of a picosecond, ananosecond, and a femtosecond is irradiated.
 6. The semiconductor devicemanufacturing method according to claim 1, wherein the first layer ofthe first substrate is formed at an intermediate layer arranged betweenthe first substrate and the first film.
 7. The semiconductor devicemanufacturing method according to claim 6, wherein forming the firstlayer on the first substrate includes any of: injecting an elemental ionto the intermediate layer arranged on the first substrate, andirradiating the intermediate layer arranged on the first substrate witha laser whose focal point is adjusted to the intermediate layer arrangedon the first substrate.
 8. The semiconductor device manufacturing methodaccording to claim 7, wherein the elemental ion injected to the firstsubstrate is at least one of a hydrogen ion, an oxygen ion, an argonion, and a helium ion, and the laser with which the intermediate layerarranged on first substrate is irradiated is ultraviolet light.
 9. Thesemiconductor device manufacturing method according to claim 7, whereinwhen the intermediate layer arranged on the first substrate isirradiated with the laser, a laser pulsed with any pulse width of apicosecond, a nanosecond, and a femtosecond is irradiated.
 10. Thesemiconductor device manufacturing method according to claim 1, whereinforming the second layer on the second film includes any of: increasinga surface roughness of the second film at the outer peripheral portionof the second substrate, forming a groove to the second film at theouter peripheral portion of the second substrate, and forming a step tothe second film at the outer peripheral portion of the second substrateto provide the outer peripheral portion lower than a bonded surfacebetween the first substrate and the second film.
 11. The semiconductordevice manufacturing method according to claim 10, wherein the surfaceroughness is equal to or greater than 50 nm.
 12. The semiconductordevice manufacturing method according to claim 1, wherein a third layernot connected to the first layer is formed on the first film at theouter peripheral portion of the first substrate.
 13. The semiconductordevice manufacturing method according to claim 12, wherein forming thethird layer on the first film includes any of: increasing a surfaceroughness of the first film at the outer peripheral portion of the firstsubstrate, forming a groove to the first film at the outer peripheralportion of the first substrate, and forming a step to the first film atthe outer peripheral portion of the first substrate to provide the outerperipheral portion lower than a bonded surface between the firstsubstrate and the second substrate.
 14. The semiconductor devicemanufacturing method according to claim 13, wherein the surfaceroughness is equal to or greater than 50 nm.
 15. The semiconductordevice manufacturing method according to claim 1, wherein a blade isinserted between the first substrate and the second substrate, or fluidis spayed between the first substrate and the second substrate to debondthe first layer and the second layer.
 16. The semiconductor devicemanufacturing method according to claim 1, wherein at least one of thefirst and second substrates is a whole wafer.
 17. A semiconductor devicemanufacturing method comprising: forming a first layer in a region of afirst substrate excluding an outer peripheral portion thereof; forming afirst semiconductor circuit above the first layer; forming a secondsemiconductor circuit on a second substrate different from the firstsubstrate; forming a second layer with a predetermined width at an outerperipheral portion of the second substrate; bonding a surface of thefirst substrate on a side provided with the first semiconductor circuitand a surface of the second substrate on a side provided with the secondsemiconductor circuit; and debonding the first layer and the secondlayer, thereby forming the second substrate including the firstsemiconductor circuit and the second semiconductor circuit, whereinforming the second layer on the second substrate includes any of:increasing a surface roughness of the outer peripheral portion of thesecond substrate, forming a groove at the outer peripheral portion ofthe second substrate, and forming a step at the outer peripheral portionof the second substrate to provide the outer peripheral portion lowerthan a bonded surface between the first substrate and the secondsubstrate.
 18. A semiconductor device manufacturing method comprising:forming a first layer in a region of a first substrate excluding anouter peripheral portion thereof; forming a first semiconductor circuitabove the first layer, forming a third layer not connected to the firstlayer at the outer peripheral portion of the first substrate; forming asecond semiconductor circuit on a second substrate different from thefirst substrate; forming a second layer with a predetermined width at anouter peripheral portion of the second substrate; bonding a surface ofthe first substrate on a side provided with the first semiconductorcircuit and a surface of the second substrate on a side provided withthe second semiconductor circuit; and debonding the first layer and thesecond layer, thereby forming the second substrate including the firstsemiconductor circuit and the second semiconductor circuit.